cha2094b rohs compliant ref. : dscha20949312 C 08-nov.-99 1/8 specification s subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 36-40ghz low noise high gain amplifier gaas monolithic microwave ic description the cha2094 is a three-stage monolithic low noise amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features broadband performances: 36-40ghz 3.0db noise figure 21db gain 1.5db gain flatness low dc power consumption, 60ma @ 3.5v chip size: 1.72 x 1.08 x 0.10 mm vgs1&2 vgs3 vds in out vds typical on wafer measurements : frequency (ghz) gain & nf ( db ) 0 4 8 12 16 20 24 34 35 36 37 38 39 40 41 42 main characteristics tamb. = 25c symbol parameter min typ max unit fop operating frequency range 36 40 ghz g small signal gain 18 21 db p1db output power at 1db gain compression 5 8 dbm nf noise figure 3.0 4.0 db esd protection : electrostatic discharge sensitive device. observe handling precautions !
cha2094b 36-40ghz low noise amplifier ref. : dscha20949312 C 08-nov.-99 2/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = +25c, vd1,2,3 = 3.5v symbol parameter min typ max unit fop operating frequency range (1) 36 40 ghz g small signal gain (1) 18 21 db d g small signal gain flatness (1) 1.5 db d gsb gain flatness over 40mhz ( within -30 ; +75c ) 0.5 dbpp is reverse isolation (1) 25 30 db p1db output power at 1db gain compression 5 8 dbm vswrin input vswr (1) 2.5:1 3.0:1 vswrout output vswr (1) 2.5:1 3.0:1 nf noise figure (2) 3.0 4.0 db vd dc voltage vd vg -2 3.5 -0.25 4 +0.4 v v id bias current (2) 60 100 ma (1) these values are representative of on-wafer mea surements that are made without bonding wires at the rf ports. (2) 60 ma is the typical bias current used for on w afer measurements, with vg1,2 = vg3. for optimum noise figure, the bias current could be red uced down to 40 ma, adjusting the vg1,2 voltage. absolute maximum ratings tamb. = 25c (1) symbol parameter values unit vd drain bias voltage 5.0 v id drain bias current 150 ma vg gate bias voltage -2.0 to +0.4 v pin maximum peak input power overdrive (2) +15 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
36-40ghz low noise amplifier cha2094b ref. : dscha20949312 C 08-nov.-99 3/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical scattering parameters (on wafer sij measurements) bias conditions: vd = 3.5volt, id = 60ma. freq. ghz s11 db s11 / // / s12 db s12 / // / s21 db s21 / // / s22 db s22 / // / 25,00 -2,96 165,27 -48,02 140,03 -16,95 -110,44 -10,05 -1 18,86 26,00 -3,22 155,96 -49,76 133,48 -11,32 -109,43 -10,84 -1 24,50 27,00 -3,67 144,32 -51,68 113,25 -5,73 -112,96 -11,84 -13 3,29 28,00 -4,43 129,06 -53,38 148,20 0,02 -123,12 -13,68 -140 ,35 29,00 -5,76 107,80 -51,07 153,30 5,87 -138,63 -15,98 -152 ,02 30,00 -8,60 75,37 -49,11 129,75 11,83 -163,77 -21,67 -162 ,85 31,00 -15,20 16,43 -43,10 102,32 17,22 158,34 -29,55 -46, 20 32,00 -24,70 -117,32 -41,34 47,85 19,91 110,72 -17,96 -70 ,62 33,00 -32,32 128,04 -41,14 -5,29 20,48 71,50 -17,40 -106, 13 34,00 -21,29 -38,29 -40,51 -43,14 20,60 40,20 -19,96 -133 ,62 35,00 -14,52 -70,72 -39,47 -69,20 20,79 12,71 -24,56 178, 55 36,00 -11,33 -94,87 -38,30 -90,11 20,92 -13,60 -24,34 95, 27 37,00 -9,96 -113,38 -37,80 -109,61 20,87 -38,94 -18,55 56 ,67 38,00 -9,89 -129,95 -35,94 -126,74 20,54 -63,47 -14,97 35 ,23 39,00 -10,20 -144,39 -35,21 -146,49 19,98 -85,35 -13,19 1 5,89 40,00 -11,51 -153,53 -34,78 -160,72 19,57 -105,56 -11,91 7,58 41,00 -13,21 -157,59 -34,26 -175,92 18,86 -125,69 -10,90 -5,61 42,00 -13,92 -154,55 -33,87 172,60 18,41 -143,91 -10,93 - 16,38 43,00 -13,55 -158,17 -33,94 156,97 18,09 -160,70 -11,24 - 20,60 44,00 -13,26 -169,25 -33,11 149,30 17,84 -178,94 -10,76 - 22,75 45,00 -12,63 174,58 -32,50 134,15 17,56 162,79 -10,73 -25 ,23 46,00 -11,41 151,40 -32,48 126,00 17,17 143,77 -10,27 -26 ,04 47,00 -10,18 125,52 -31,57 119,05 16,79 124,08 -9,19 -30, 65 48,00 -8,38 94,26 -29,97 102,75 16,21 102,47 -8,20 -37,96 49,00 -5,83 71,80 -31,11 79,31 15,23 80,21 -7,79 -48,28 50,00 -4,17 49,01 -32,37 66,58 13,86 58,54 -7,34 -61,88 51,00 -2,17 29,23 -36,86 59,57 12,36 38,69 -8,29 -75,36 52,00 -1,17 11,23 -34,48 52,60 10,48 19,05 -9,08 -85,34 53,00 -0,84 -2,48 -38,67 15,86 8,26 1,67 -9,77 -96,49 54,00 -0,55 -14,01 -40,49 -6,97 5,94 -13,96 -10,59 -106,1 3 55,00 -0,36 -22,96 -42,95 -5,11 3,49 -27,62 -11,16 -116,7 6
cha2094b 36-40ghz low noise amplifier ref. : dscha20949312 C 08-nov.-99 4/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical output power ( p-1db gain compression ) mea surements. ( cw on wafer ) conditions : vd = 3.5 volt, frequency = 38 ghz 4 6 8 10 12 14 16 18 20 22 20 30 40 50 60 70 80 90 100 current id ( ma ) gain & p-1db ( db, dbm ) gain p-1db conditions: id = 60 ma, frequency = 38 ghz 4 6 8 10 12 14 16 18 20 22 2.5 3 3.5 4 4.5 bias voltage vd ( volt ) gain & p-1db ( db, dbm ) gain p-1db
36-40ghz low noise amplifier cha2094b ref. : dscha20949312 C 08-nov.-99 5/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical (gain & nf) versus id measurements (on wafe r) conditions: vd = 3.5volt, frequency = 38ghz 4 9 14 19 24 0 10 20 30 40 50 60 70 80 90 100 current id ( ma ) gain ( db ) 0 1 2 3 4 5 6 7 8 9 10 nf ( db ) gain nf typical measurements in test jig bias conditions: vd = 3.5volt, id = 50ma 4 9 14 19 24 36 37 38 39 40 41 42 43 44 45 46 47 frequency ( ghz ) gain ( db ) 0 1 2 3 4 5 6 7 8 9 10 nf ( db ) gain nf
cha2094b 36-40ghz low noise amplifier ref. : dscha20949312 C 08-nov.-99 6/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical bias tuning for low noise operation the circuit schematic is given below: in out vd vg 1,2 vg 3 100 100 50 for low noise operation, a separate access to the g ate voltages of the two first stages (vgs1&2), and of the output stage (vgs3) is provided. nominal bias for low noise operation is obtained fo r a typical current of 20 ma for the output stage a nd 15 ma for each of the two first stages (50 ma for t he amplifier). the first step to bias the amplifier is to tune the vgs1&2 = -1v, and vgs3 to drive 20 ma for the full amplifier. then vgs1&2 is reduced to obtain 50 ma o f current through the amplifier. a fine tuning of the noise figure may be obtained b y modifying the vgs1&2 bias voltage, but keeping the previous value for vgs3.
36-40ghz low noise amplifier cha2094b ref. : dscha20949312 C 08-nov.-99 7/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data to vdd dc drain supply feed to vgs 1&2 dc gate supply feed to vgs 3 dc gate supply feed 100pf 100pf 100pf in out note: supply feed should be capacitively bypassed. 1720 10 1125 505 1080 10 415 340 415 710 bonding pad positions (chip thickness: 100m. all dimensions are in micro meters)
cha2094b 36-40ghz low noise amplifier ref. : dscha20949312 C 08-nov.-99 8/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : cha2094b99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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